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1

Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications

Sambuco Salomone, L., Lipovetzky, J., Carbonetto, S. H., García Inza, M. A., Redin, E. G., Campabadal, F., Faigón, A.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

2

An effective-field approach for the Fowler–Nordheim tunneling current through a metal–oxide–semiconductor charged barrier

Miranda, E., Redin, G., Faigón, A.

Journal:

Journal of Applied Physics

Year:

1997

Language:

english

File:

PDF, 349 KB

english, 1997

3

Transient currents in pulsed metal–oxide–semiconductor tunnel diodes

Vercik, A., Faigón, A.

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 336 KB

english, 1998

4

Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al[sub 2]O[sub 3], HfO[sub 2], and nanolaminates on different silicon substrates

Campabadal, F., Rafí, J. M., Zabala, M., Beldarrain, O., Faigón, A., Castán, H., Gómez, A., García, H., Dueñas, S.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 1.11 MB

english, 2011

5

Electrical characterization of reoxidized nitrided silicon films on silicon

Faigón, Adrián, Shappir, J.

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 861 KB

english, 1991